Yokosuka, Japan

Tatsuro Fujiu

This inventor holds 1 USPTO granted patent. Top assignee: Nifco Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tatsuro Fujiu. Retrieved from https://idiyas.com/inventor/tatsuro-fujiu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Tatsuro Fujiu and High-Frequency Communication Technology.

Introduction

Tatsuro Fujiu is an inventor associated with Yokosuka, Japan, and Nifco Inc. His patent work addresses the design of a radio wave absorber for high-frequency communication equipment. The available information identifies 1 patent associated with him.

Latest Patents

Fujiu’s listed patent, “Radio wave absorber for high-frequency communication device,” describes an absorber designed to improve mass productivity, reduce costs, and lower weight. It has a side part surrounding a semiconductor element mounted on a base, along with a top part that closes the absorber’s open face. Periodically arranged protrusions extend from the top part toward the semiconductor element while remaining spaced apart from it. The protrusions taper toward the element and are integrally molded from synthetic resin.

Career Highlights

The invention focuses on combining a practical absorber structure with a manufacturing approach intended to support efficient production. Its molded resin construction and tapered, periodically arranged protrusions are central features of the disclosed design. Fujiu is associated with Nifco Inc.

Collaborations

Makoto Muranaka is identified as Fujiu’s coworker. The available information does not specify further details about their collaboration.

Conclusion

Tatsuro Fujiu’s listed patent presents a lightweight, cost-conscious radio wave absorber design for high-frequency communication equipment, with features intended to support mass production.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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