Tatsuo Omori

Title: Tatsuo Omori: Semiconductor Manufacturing Innovation

Introduction

Tatsuo Omori is an inventor associated with Tokyo, Japan, and Mitsubishi Electric Corporation. His patent work concerns manufacturing gallium-nitride-based semiconductor devices designed for stable, long-term operation. The available information lists 1 patent for him.

Latest Patents

Omori’s listed patent is “Method of Manufacturing Semiconductor Device Including Gallium-Nitride Semiconductor Structure and a Palladium Contact.” It describes a process for forming a p-type electrode on a p-type gallium nitride (GaN) contact layer.

In the method, an insulation film is formed on surfaces other than the ridge surface. An oxygen-containing gas is then supplied to oxidize the p-type GaN contact layer’s surface and create an oxide film. The p-type electrode is formed over the oxide and insulation films by evaporation or sputtering. The device is subsequently heat-treated at 400–700 °C in an atmosphere containing nitrogen or an inert gas. The process aims to support stable device operation while limiting performance degradation.

Career Highlights

Omori’s documented patent contribution focuses on semiconductor fabrication, particularly electrode formation and heat treatment for gallium-nitride-based structures. The patent identifies Mitsubishi Electric Corporation as his company affiliation.

Collaborations

Kenichi Ohtsuka and Kyozo Kanamoto are identified as Omori’s coworkers. The available information does not specify their roles in the patent or the extent of their collaboration.

Conclusion

Tatsuo Omori’s listed invention addresses a practical challenge in gallium-nitride semiconductor manufacturing by detailing a process intended to help preserve device performance over time.