Company Filing History:
Years Active: 1994-1995
Title: Innovations of Tatsuo Aoki
Introduction
Tatsuo Aoki is a notable inventor based in Hachioji, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, Aoki's work focuses on enhancing semiconductor circuit devices.
Latest Patents
One of Aoki's latest patents is a semiconductor circuit device and method for production thereof. This invention discloses a semiconductor circuit device in which an impurity ion implanted region is formed in a substrate. A Schottky junction type gate electrode is created above the impurity ion implanted region, with a source electrode and a drain electrode positioned on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes. Additionally, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes. The gate electrode is constructed from a refractory metal.
Career Highlights
Aoki is currently employed at Nippon Telegraph and Telephone Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices.
Collaborations
Aoki has collaborated with notable coworkers, including Fumiaki Hyuga and Kenji Shiojima. Their combined expertise has contributed to the success of various projects within their field.
Conclusion
Tatsuo Aoki's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His innovative approaches continue to influence the development of advanced semiconductor devices.