The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 1994
Filed:
Dec. 22, 1993
Fumiaki Hyuga, Tokyo, JP;
Kenji Shiojima, Isahara, JP;
Tatsuo Aoki, Hachioji, JP;
Kazuyoshi Asai, Atsugi, JP;
Masami Tokumitsu, Isehara, JP;
Kazumi Nishimura, Isehara, JP;
Yasuro Yamane, Sagamihara, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
A semiconductor circuit device is disclosed in which an impurity ion implanted region is formed in a substrate, a Schottky junction type gate electrode is formed above the impurity ion implanted region, and a source electrode and a drain electrode are formed on both sides of the gate electrode. In this device, an InGaP barrier layer is formed between the substrate and the electrodes, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, and the gate electrode is formed of a refractory metal.