Company Filing History:
Years Active: 1994-1995
Title: Fumiaki Hyuga: Innovator in Semiconductor Technology
Introduction
Fumiaki Hyuga is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative approach to circuit design.
Latest Patents
Hyuga's latest patents include a semiconductor circuit device and method for production thereof. This invention discloses a semiconductor circuit device in which an impurity ion implanted region is formed in a substrate. A Schottky junction type gate electrode is positioned above the impurity ion implanted region, with a source electrode and a drain electrode formed on both sides of the gate electrode. In this device, an InGaP barrier layer is established between the substrate and the electrodes. Additionally, a cap layer comprising a semiconductor free from In as a constituent is formed between the InGaP barrier layer and the electrodes, while the gate electrode is constructed from a refractory metal.
Career Highlights
Fumiaki Hyuga is associated with Nippon Telegraph and Telephone Corporation, where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of efficient and innovative circuit designs that are crucial for modern electronic devices.
Collaborations
Hyuga has collaborated with notable colleagues such as Kenji Shiojima and Tatsuo Aoki. Their combined expertise has fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Fumiaki Hyuga's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the field. His work continues to influence the development of advanced electronic devices.