Toyama, Japan

Tao Liu

This inventor holds 1 USPTO granted patent. Top assignee: Kokusai Electric Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tao Liu. Retrieved from https://idiyas.com/inventor/tao-liu-459p3a5c

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Tao Liu

Introduction

Tao Liu is a notable inventor based in Toyama, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to advancements that enhance the manufacturing processes of semiconductor devices.

Latest Patents

Tao Liu holds a patent for a "Method of processing substrate, substrate processing apparatus, method of manufacturing semiconductor device, and recording medium." This innovative technique involves several steps, including supplying various gases to the substrate to form a film containing essential elements. His patent is a testament to his expertise and creativity in the semiconductor industry, with a total of 1 patent.

Career Highlights

Liu is currently employed at Kokusai Electric Corporation, where he continues to push the boundaries of semiconductor manufacturing. His role at the company allows him to apply his knowledge and skills to develop cutting-edge technologies that benefit the industry.

Collaborations

Throughout his career, Tao Liu has worked alongside talented colleagues, including Kazuyuki Okuda and Takaaki Noda. These collaborations have fostered an environment of innovation and creativity, leading to the development of advanced technologies.

Conclusion

Tao Liu's contributions to the semiconductor field exemplify the impact of innovative thinking and collaboration. His patent and work at Kokusai Electric Corporation highlight his dedication to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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