This inventor holds 2 USPTO granted patents. Top assignee: Matsushita Electric Industrial Co., Ltd.. Active years: 1978-1981.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Location History:
- Suita, JA (1978)
- Osaka, JP (1981)
Company Filing History:
Years Active: 1978-1981
Title: The Innovations of Tamotsu Uragaki
Introduction
Tamotsu Uragaki is a notable inventor based in Suita, Japan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approaches to manufacturing semiconductor devices.
Latest Patents
Uragaki's latest patents include a method for growing semiconductor epitaxial layers and a process for manufacturing a gallium phosphide electroluminescent device. The method for growing semiconductor epitaxial layers is characterized by its application in the production of devices such as light-emitting diodes. The process for manufacturing a gallium phosphide electroluminescent device involves etching gallium phosphide with hot phosphoric acid, resulting in a flat and smooth surface inclined at an angle of 45 to 55 degrees to the (1 1 1) plane. This innovative approach enhances the efficiency of electroluminescent diodes by ensuring that visible rays generated in the p-n junction are totally reflected on the side faces, significantly increasing the intensity of emitted rays.
Career Highlights
Tamotsu Uragaki is associated with Matsushita Electric Industrial Co., Ltd., where he has contributed to advancements in semiconductor technology. His work has been instrumental in improving the performance and efficiency of semiconductor devices.
Collaborations
Uragaki has collaborated with notable coworkers such as Morio Inoue and Haruyoshi Yamanaka, further enhancing the innovative environment in which he works.
Conclusion
Tamotsu Uragaki's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the field. His innovative methods continue to influence the development of efficient semiconductor devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
