Santa Barbara, CA, United States of America

Tamara H Wright

This inventor holds 1 USPTO granted patent. Top assignee: Raytheon Company. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tamara H Wright. Retrieved from https://idiyas.com/inventor/tamara-h-wright

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Tamara H Wright

Introduction

Tamara H Wright is a notable inventor based in Santa Barbara, CA. She has made significant contributions to the field of semiconductor technology. Her work focuses on enhancing the performance and reliability of semiconductor structures.

Latest Patents

Tamara holds a patent for a "Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate." This innovative method involves forming a composite semiconductor structure that alters the thermal expansion rate of a substrate. The process includes atomically bonding a thermal matching substrate to a first substrate and a balancing substrate, which helps prevent warping in the composite structure.

Career Highlights

Tamara is currently employed at Raytheon Company, where she applies her expertise in semiconductor technology. Her work has been instrumental in advancing the capabilities of thermal management in electronic devices.

Collaborations

Tamara has collaborated with talented coworkers, including Heather D Leifeste and Andreas Hampp. These partnerships have fostered a creative environment that encourages innovation and problem-solving.

Conclusion

Tamara H Wright's contributions to semiconductor technology exemplify the impact of innovative thinking in engineering. Her patent and work at Raytheon Company highlight her commitment to advancing technology for better performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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