This inventor holds 1 USPTO granted patent. Top assignee: Raytheon Company. Active years: 2012.
Company Filing History:
Years Active: 2012
Title: The Innovative Contributions of Tamara H Wright
Introduction
Tamara H Wright is a notable inventor based in Santa Barbara, CA. She has made significant contributions to the field of semiconductor technology. Her work focuses on enhancing the performance and reliability of semiconductor structures.
Latest Patents
Tamara holds a patent for a "Composite semiconductor structure formed using atomic bonding and adapted to alter the rate of thermal expansion of a substrate." This innovative method involves forming a composite semiconductor structure that alters the thermal expansion rate of a substrate. The process includes atomically bonding a thermal matching substrate to a first substrate and a balancing substrate, which helps prevent warping in the composite structure.
Career Highlights
Tamara is currently employed at Raytheon Company, where she applies her expertise in semiconductor technology. Her work has been instrumental in advancing the capabilities of thermal management in electronic devices.
Collaborations
Tamara has collaborated with talented coworkers, including Heather D Leifeste and Andreas Hampp. These partnerships have fostered a creative environment that encourages innovation and problem-solving.
Conclusion
Tamara H Wright's contributions to semiconductor technology exemplify the impact of innovative thinking in engineering. Her patent and work at Raytheon Company highlight her commitment to advancing technology for better performance and reliability.