Company Filing History:
Years Active: 2016-2017
Title: Talid R Sinno: Innovator in Quantum Dot Technology
Introduction
Talid R Sinno is a prominent inventor based in Philadelphia, PA, known for his contributions to the field of semiconductor technology. With a focus on quantum confined structures, he has made significant strides in the development of innovative methods for patterning germanium quantum dots.
Latest Patents
Talid R Sinno holds 2 patents, with his latest patent titled "Large-scale patterning of germanium quantum dots by stress transfer." This patent describes a method for forming a two-dimensional array of semiconductor quantum confined structures. The process involves providing a layer with first and second atoms of different sizes, using an indenter template with at least one indenter structure, and applying pressure to generate elastic deformation in the layer without causing plastic deformation. The method also includes annealing the layer and forming quantum confined structures in regions not pressed by the indenter structure.
Career Highlights
Talid R Sinno is associated with Stc.unm, where he continues to advance his research and development efforts in semiconductor technologies. His work has garnered attention for its potential applications in various fields, including electronics and photonics.
Collaborations
One of his notable collaborators is Sang M Han, with whom he has worked on various projects related to quantum dot technology.
Conclusion
Talid R Sinno's innovative work in the field of semiconductor quantum confined structures positions him as a key figure in advancing technology that could have far-reaching implications. His contributions continue to inspire future research and development in this exciting area.