The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 21, 2016

Filed:

Aug. 14, 2015
Applicants:

Sang M. Han, Albuquerque, NM (US);

Talid R. Sinno, Philadelphia, PA (US);

Inventors:

Sang M. Han, Albuquerque, NM (US);

Talid R. Sinno, Philadelphia, PA (US);

Assignee:

STC.UNM, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 51/00 (2006.01); H01L 21/8234 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823493 (2013.01); H01L 21/02532 (2013.01); H01L 21/02546 (2013.01); H01L 21/3245 (2013.01);
Abstract

Provided is a method for forming a two-dimensional array of semiconductor quantum confined structures. The method includes providing a layer that has first atoms and second atoms, the first atoms having a different size than the second atoms; providing an indenter template that includes at least one indenter structure extending from a surface of the indenter template; contacting the layer and the at least one indenter structure together with a pressure sufficient to generate an elastic deformation in the layer but without generating plastic deformation of the layer; annealing the layer; and forming at least one quantum confined structure in a region of the layer in a region of the layer not pressed by the at least one indenter structure.


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