Nagoya, Japan

Takuya Yoto

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Ngk Insulators, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takuya Yoto. Retrieved from https://idiyas.com/inventor/takuya-yoto

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Takuya Yoto: Innovator in Semiconductor Manufacturing

Introduction

Takuya Yoto is a prominent inventor based in Nagoya, Japan. He has made significant contributions to the field of semiconductor manufacturing. His innovative work has led to the development of a unique patent that enhances the efficiency of semiconductor production.

Latest Patents

Takuya Yoto holds a patent for a member for semiconductor manufacturing apparatus. This invention includes a ceramic plate with a wafer placement surface and a porous plug that allows gas flow. The porous plug consists of a first porous member, which is higher in purity and thinner than the second porous member. The second member has a higher porosity, making it an essential component in the manufacturing process.

Career Highlights

Takuya Yoto is currently employed at NGK Insulators, Inc., where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing manufacturing techniques and improving product quality.

Collaborations

He collaborates with talented coworkers, including Yusuke Ogiso and Tomoki Nagae. Their combined expertise fosters a creative environment that drives innovation in their projects.

Conclusion

Takuya Yoto's contributions to semiconductor manufacturing exemplify the spirit of innovation. His patent and ongoing work at NGK Insulators, Inc. highlight his commitment to advancing technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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