Hitachinaka, Japan

Takuya Iinuma

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi Astemo Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takuya Iinuma. Retrieved from https://idiyas.com/inventor/takuya-iinuma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Takuya Iinuma: Inventor of an Advanced Power Semiconductor Control System.

Introduction

Takuya Iinuma is an inventor associated with Hitachi Astemo Ltd. in Hitachinaka, Japan. His patent work focuses on controlling power semiconductor switching to balance speed, reliability, and reduced electrical losses.

Latest Patents

Iinuma is credited with 1 patent: “Electronic Control Unit and Gate Driving Method of Power Semiconductor Element.” The invention describes an electronic control unit containing a microcontroller, a power semiconductor element, and a gate drive circuit that adjusts the element’s gate drive current in response to switching behavior.

The circuit detects changes in the element’s output voltage to identify the start of switching. During turn-on, it increases the gate drive current before the voltage reaches its peak; during turn-off, it decreases the current before the peak. This approach is designed to support high-speed switching while suppressing surge voltage, helping achieve reliable, low-loss operation.

Career Highlights

Iinuma’s listed patent reflects work on electronic control systems for power semiconductor devices. Its focus is the precise adjustment of gate drive current during switching, a technique intended to improve performance while limiting voltage surges.

Collaborations

Iinuma is associated with Hitachi Astemo Ltd. His listed coworkers include Masahiro Doi and Takeshi Ikuyama.

Conclusion

Takuya Iinuma’s patent highlights an approach to faster, more reliable power semiconductor switching that aims to reduce surge voltage and electrical losses.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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