Takeshi Okano

This inventor holds 8 USPTO granted patents. Top assignees: Mitsubishi Chemical Industries Limited, Mitsubishi Monsanto Chemical Co., Ltd.. Active years: 1976-1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeshi Okano. Retrieved from https://idiyas.com/inventor/takeshi-okano-bbssc0f7

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 8

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 4

Forward Citations = 52(Granted Patents)

Location History:

Kitakyushu, JA (1976)
Machida, JP (1978 - 1980)
Tsuchiura, JP (1989)
Ushiku, JP (1989 - 1990)

Company Filing History:

8 out of 614

Mitsubishi Chemical Industries Limited

patents

2 out of 58

Mitsubishi Monsanto Chemical Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 1976-1990

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8 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 4968642 - Method of making a gallium arsenide phosphide-, mixed crystal-epitaxial (1990-11-06),

2. 4865682 - Growth method of an organic compound single crystal and a boat used (1989-09-12),

3. 4865655 - Gallium arsenide phosphide mixed crystal epitaxial wafer with a graded (1989-09-12),

4. 4224292 - Catalytic reduction of nitrogen oxides (1980-09-23),

5. 4165441 - Process for the preparation of styrene (1979-08-21),

6. 4144396 - Process for producing alkylene glycol esters (1979-03-13),

7. 4112241 - Process for producing alkylene glycol esters (1978-09-05),

8. 3939205 - Process for hydrating an unsaturated nitrile (1976-02-17),

Title: The Innovations of Takeshi Okano

Introduction

Takeshi Okano is a prominent inventor based in Machida, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of gallium arsenide phosphide (GaAsP) materials. With a total of 8 patents to his name, Okano's work has had a lasting impact on the industry.

Latest Patents

One of Okano's latest patents is a method of making a gallium arsenide phosphide mixed crystal epitaxial wafer. This invention involves an epitaxial wafer for producing arrays of GaAsP-LEDs, which comprises a GaAs.sub.1-x P.sub.x layer with varying X. The layer region(s) feature a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This innovative approach contributes to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.

Another notable patent by Okano is the gallium arsenide phosphide mixed crystal epitaxial wafer with a graded structure. Similar to his previous invention, this epitaxial wafer is designed for producing arrays of GaAsP-LEDs and includes a GaAs.sub.1-x P.sub.x layer with varying X. The discontinuous variance of x along the thickness of the layer region(s) enhances the uniformity of light emission in the resulting LEDs.

Career Highlights

Throughout his career, Takeshi Okano has worked with several notable companies, including Mitsubishi Chemical Industries Limited and Mitsubishi Monsanto Chemical Co., Ltd. His experience in these organizations has allowed him to refine his expertise in semiconductor materials and LED technology.

Collaborations

Okano has collaborated with esteemed colleagues such as Hisanori Fujita and Yoshimitsu Kobayashi. These partnerships have further enriched his research and development efforts in the field of semiconductor technology.

Conclusion

Takeshi Okano's contributions to the field of semiconductor technology, particularly through his innovative patents, have significantly advanced the development of gallium arsenide phosphide materials. His work continues to influence the industry and inspire future innovations.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]