Company Filing History:
Years Active: 1996-1997
Title: The Innovations of Takeshi Naganuma
Introduction
Takeshi Naganuma is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents to his name, Naganuma's work focuses on the manufacturing processes of insulated-gate field-effect transistors.
Latest Patents
Naganuma's latest patents include a method of manufacturing an insulated-gate field-effect transistor in a semiconductor device. This innovative process involves forming a refractory metal film over a semiconductor substrate with an insulating film interposed. An insulated gate electrode is created by patterning the refractory metal film and insulating film. After forming source/drain regions in the substrate's surface, a poly-silicon film is applied, which is then heated to convert part of it into a silicide film portion. The silicide film portion is subsequently removed, leaving portions of the doped poly-silicon film to serve as source/drain electrodes. This method enhances the efficiency and performance of semiconductor devices.
Career Highlights
Takeshi Naganuma is currently employed at Nippon Steel Corporation, where he continues to innovate in the semiconductor field. His expertise and dedication have positioned him as a key figure in advancing technology within the industry.
Collaborations
Naganuma collaborates with fellow inventor Shoichi Iwasa, contributing to the development of cutting-edge technologies in their field.
Conclusion
Takeshi Naganuma's contributions to semiconductor technology through his patents and work at Nippon Steel Corporation highlight his role as an influential inventor. His innovative methods for manufacturing insulated-gate field-effect transistors are paving the way for advancements in the industry.