The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 1997
Filed:
Aug. 02, 1996
Shoichi Iwasa, Tokyo, JP;
Takeshi Naganuma, Tokyo, JP;
Nippon Steel Corporation, Tokyo, JP;
Abstract
For manufacturing an insulated-gate field-effect transistor in a semiconductor device, a refractory metal film is formed over a semiconductor substrate with an insulating film being interposed therebetween. An insulated gate electrode is formed by patterning the refractory metal film and insulating film. After formation of source/drain regions in a surface portion of the substrate, using the insulated gate electrode as a mask, a poly-silicon film is formed extending to cover the surface portion of the substrate and the patterned refractory metal film of the gate electrode. The resulting structure is heated to convert at least that portion of the poly-silicon film which lies on the patterned refractory metal film to a silicide film portion. The thus formed silicide film portion is removed so that portions of the doped poly-silicon film are left on the source/drain regions in the surface portion of semiconductor substrate. These left portions of the doped poly-silicon film serve as source/drain electrodes.