Ebina, Japan

Takeshi Moro

This inventor holds 1 USPTO granted patent. Top assignee: Socionext Inc.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takeshi Moro. Retrieved from https://idiyas.com/inventor/takeshi-moro

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations by Takeshi Moro

Introduction

Takeshi Moro is a notable inventor based in Ebina, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances circuit performance.

Latest Patents

Takeshi Moro holds 1 patent for a semiconductor device. This device includes a transistor circuit with a power supply terminal and a back gate terminal. It features a variable resistance connected between a first voltage terminal and the power supply terminal. Additionally, a control circuit regulates the variable resistance based on a digital signal. This signal converts a difference voltage when the absolute value of the difference voltage between the first voltage terminal and the back gate terminal is lower than a threshold value.

Career Highlights

Takeshi Moro is currently employed at Socionext Inc., where he continues to innovate in semiconductor technology. His work at the company has positioned him as a key player in advancing electronic devices.

Collaborations

Takeshi Moro collaborates with his coworker, Takeshi Kimura, to further enhance their research and development efforts in the semiconductor field.

Conclusion

Takeshi Moro's contributions to semiconductor technology exemplify the spirit of innovation. His patent reflects a significant advancement in the industry, showcasing his expertise and dedication to improving electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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