Company Filing History:
2 out of 10,273 
1 out of 1 Years Active: 1987-1993
Title: The Innovative Contributions of Takeshi Himoto
Introduction
Takeshi Himoto is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and efficiency of semiconductor devices.
Latest Patents
Himoto's latest patents include a semiconductor structure for photodetectors. This innovative photodiode features an n-type semiconductor layer and a p-type semiconductor region, which is selectively formed in the central part of the n-type layer. The design includes a dish-like shaped pn-junction, an annular electrode on the p-type region, and a dielectric layer that prevents light from reaching the semiconductor layer. Another notable patent is for a semiconductor device that incorporates an ohmic electrode on a p-type III-V compound semiconductor. This device utilizes a unique assembly of layers, including titanium, zinc, and a metal layer made from elements such as platinum, molybdenum, tungsten, or chromium, topped with a gold layer. This design minimizes contact resistance and addresses issues related to gold electromigration.
Career Highlights
Throughout his career, Takeshi Himoto has worked with esteemed companies, including Sumitomo Electric Industries, Limited. His experience in these organizations has allowed him to refine his expertise in semiconductor technology and contribute to various innovative projects.
Collaborations
Himoto has collaborated with notable professionals in his field, including Ichiro Tonai. Their joint efforts have further advanced the development of semiconductor technologies.
Conclusion
Takeshi Himoto's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the industry. His innovative designs continue to impact the field positively.