The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 1987
Filed:
Mar. 04, 1985
Takeshi Himoto, Osaka, JP;
Sumitomo Electric Industries Ltd., Osaka, JP;
Abstract
A semiconductor device having an ohmic electrode which has formed on the surface of a p-type III-V compound semiconductor an assembly of a first Ti layer, a second Zn layer, a third metal layer made of one element selected from among Pt, Mo, W and Cr, and a fourth Au layer is disclosed. A process for producing such semiconductor device is also disclosed. The present invention provides a novel ohmic electrode having a low contact resistance comparable to that of a conventional electrode formed by deposition of successive Au, Zn and Au layers. The novel electrode also has the advantage of another conventional electrode wherein the Au electromigration is held to a minimum by forming an assembly of a Ti layer, a metal layer made of an element selected from among Pt, Mo, W and Cr, and an Au layer.