Yokkaichi, Japan

Takeru Maeda

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Kioxia Corporation. Active years: 2026.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Takeru Maeda - Innovator in Semiconductor Technology

Takeru Maeda is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that showcases his expertise and creativity.

Latest Patents

Takeru Maeda holds a patent for a semiconductor device. This device includes a semiconductor substrate, a first layer formed on the substrate that contains a semiconductor element and a first insulating film. Additionally, it features a second layer above the first layer, which includes a channel made of an oxide semiconductor and a second insulating film. The third layer, formed above the second layer, contains an electrode on the channel and a third insulating film with a film density that is less than at least one of the film densities of the first or second insulating films. This innovative design enhances the performance and efficiency of semiconductor devices.

Career Highlights

Takeru Maeda is currently employed at Kioxia Corporation, where he continues to push the boundaries of semiconductor technology. His work at Kioxia has allowed him to collaborate with other talented professionals in the field.

Collaborations

Some of Takeru Maeda's notable coworkers include Taro Shiokawa and Shosuke Fujii. Their combined expertise contributes to the innovative environment at Kioxia Corporation.

Conclusion

Takeru Maeda is a key figure in the semiconductor industry, with a focus on developing advanced technologies that improve device performance. His patent and ongoing work at Kioxia Corporation highlight his commitment to innovation in this critical field.

Profile summary based on public USPTO records.
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