Company Filing History:
Years Active: 1988
Title: Takeo Shiomi - Innovator in Semiconductor Technology
Takeo Shiomi is a prominent inventor based in Kawasaki, Japan. He has made significant contributions to the field of semiconductor devices, particularly focusing on high breakdown voltage technologies. His innovative work has led to the development of a unique semiconductor device that enhances performance and reliability.
Latest Patents
Takeo Shiomi holds 1 patent for his invention related to semiconductor devices. This patent describes a semiconductor device formed with a highly doped impurity region of the same conductive type as the semiconductor substrate. The design includes a highly doped impurity region that projects by a prescribed amount opposite a first impurity region, which is formed at the back face of the semiconductor substrate. The projecting width T is strategically positioned to satisfy specific dimensional criteria, enhancing the device's functionality.
Career Highlights
Throughout his career, Takeo Shiomi has been associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to collaborate with other talented professionals and contribute to groundbreaking advancements in semiconductor technology.
Collaborations
One of his notable coworkers is Takao Emoto, with whom he has worked closely on various projects. Their collaboration has furthered the development of innovative solutions in the semiconductor field.
Conclusion
Takeo Shiomi's contributions to semiconductor technology exemplify the spirit of innovation. His patent on high breakdown voltage semiconductor devices showcases his expertise and commitment to advancing technology. His work continues to influence the industry and inspire future innovations.