The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 1988
Filed:
May. 11, 1987
Takao Emoto, Yokosuka, JP;
Takeo Shiomi, Kawasaki, JP;
Kabushiki Kaisha Toshiba, Kawasaki, JP;
Abstract
This invention relates to high breakdown voltage semiconductor devices and consists in a semiconductor device formed with a highly doped impurity region of the same conductive type as the semiconductor substrate, wherein the highly doped impurity region projects by a prescribed amount opposite a first impurity region and is formed at the back face of the semiconductor substrate, its projecting width T being in the same position as the middle of the first impurity region and being such as to satisfy t1.ltorsim.T.ltorsim.t1+2W0, where t1 is the width of the first impurity region, and W0 is the separtion in the depth direction between the first impurity region and the highly doped impurity region.