Nishimatuura-gun, Japan

Takehiro Hisatomi

USPTO Granted Patents = 2 

Average Co-Inventor Count = 3.0

ph-index = 2

Forward Citations = 20(Granted Patents)


Company Filing History:


Years Active: 1999-2000

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2 patents (USPTO):Explore Patents

Title: Takehiro Hisatomi: Innovator in Silicon Wafer Technology

Introduction

Takehiro Hisatomi is a prominent inventor based in Nishimatsuura-gun, Japan. He has made significant contributions to the field of silicon wafer technology, holding a total of 2 patents. His work focuses on enhancing the efficiency and effectiveness of silicon wafer annealing processes.

Latest Patents

His latest patents include a silicon single crystal wafer annealing method and equipment. This invention allows for the annealing of a vertical stack of two or more groups of unseparated wafers, with approximately 10 wafers in each group. The method enables the annealing of more wafers in a single operation under various conditions. These conditions include oxygen outer diffusion annealing to form a denuded zone, controlling bulk micro defects, enhancing gate oxide integrity, and suppressing dislocation and slip in elevated temperature environments.

Career Highlights

Throughout his career, Takehiro Hisatomi has worked with notable companies such as Sumitomo Sitix Corporation and Sumitomo Metal Industries, Inc. His experience in these organizations has contributed to his expertise in silicon wafer technology and innovation.

Collaborations

Some of his coworkers include Naoshi Adachi and Masakazu Sano. Their collaboration has likely played a role in advancing the research and development of silicon wafer technologies.

Conclusion

Takehiro Hisatomi's contributions to silicon wafer technology through his innovative patents and career highlights demonstrate his significant impact in the field. His work continues to influence advancements in semiconductor manufacturing processes.

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