Company Filing History:
Years Active: 1987-1992
Title: Takefumi Ohshima: Innovator in Thin Film Semiconductor Technology
Introduction
Takefumi Ohshima is a prominent inventor based in Kanagawa, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of thin film MOS transistors. With a total of 2 patents to his name, Ohshima's work has paved the way for advancements in electronic devices.
Latest Patents
Ohshima's latest patents include a thin film MOS transistor that features a pair of gate electrodes opposing each other across a thin film semiconductor layer. This innovative design minimizes electron scattering, thereby maximizing electron mobility and allowing for higher speed operation of the transistor. The thin film semiconductor layer has a thickness of less than or equal to 100 nm, which is crucial for its performance. Additionally, he has developed a method for forming a thin semiconductor film that involves several steps, including ion implantation and annealing. This method enables the creation of a large thin polycrystalline semiconductor film with improved electrical characteristics.
Career Highlights
Takefumi Ohshima is currently employed at Sony Corporation, where he continues to push the boundaries of semiconductor technology. His work has been instrumental in enhancing the performance of electronic devices, making them faster and more efficient.
Collaborations
Ohshima has collaborated with notable colleagues such as Takashi Noguchi and Hisao Hayashi. Their combined expertise has contributed to the success of various projects within the semiconductor field.
Conclusion
Takefumi Ohshima's innovative work in thin film semiconductor technology has established him as a key figure in the industry. His patents and contributions continue to influence the development of advanced electronic devices.