The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 1992
Filed:
Oct. 19, 1990
Hisao Hayashi, Kanagawa, JP;
Michio Negishi, Kanagawa, JP;
Takashi Noguchi, Kanagawa, JP;
Takefumi Ohshima, Kanagawa, JP;
Yuji Hayashi, Kanagawa, JP;
Toshikazu Maekawa, Kanagawa, JP;
Takeshi Matsushita, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A thin film MOS transistor has a construction which can minimize scattering of electron and thus maximize electrons mobility for allowing higher speed operation of the transistor. For this, the MOS transistor has a thin film semiconductor layer having a thickness in a range less than or equal to 100 nm, between a pair of gate electrodes which oppose each other across the semiconductor layer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile