Company Filing History:
Years Active: 2012
Title: Takefumi Nishimuta: Innovator in Semiconductor Technology
Introduction
Takefumi Nishimuta is a prominent inventor based in Aichi-ken, Japan. He is known for his significant contributions to semiconductor technology, particularly in the development of advanced transistor designs. His innovative work has led to the creation of a patent that enhances the performance and efficiency of semiconductor devices.
Latest Patents
Takefumi Nishimuta holds a patent for a MIS transistor and CMOS transistor. This invention involves a MIS transistor formed on a semiconductor substrate, which includes a projecting part with at least two different crystal planes on its surface. The design features a gate insulator that covers parts of these crystal planes, along with a gate electrode that sandwiches the gate insulator. This configuration allows for improved control over the increase in element area and channel width, making it a significant advancement in the field.
Career Highlights
Nishimuta is associated with the Foundation for Advancement of International Science, where he continues to push the boundaries of semiconductor research. His work has been instrumental in developing technologies that are crucial for modern electronic devices.
Collaborations
He has collaborated with notable colleagues such as Hiroshi Miyagi and Tadahiro Ohmi, contributing to various projects that aim to advance semiconductor technology.
Conclusion
Takefumi Nishimuta's innovative work in semiconductor technology, particularly his patent for the MIS transistor and CMOS transistor, showcases his commitment to enhancing electronic device performance. His contributions are vital to the ongoing evolution of the semiconductor industry.