The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2012
Filed:
Oct. 22, 2009
Takefumi Nishimuta, Aichi-ken, JP;
Hiroshi Miyagi, Niigata, JP;
Tadahiro Ohmi, Miyagi, JP;
Shigetoshi Sugawa, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Takefumi Nishimuta, Aichi-ken, JP;
Hiroshi Miyagi, Niigata, JP;
Tadahiro Ohmi, Miyagi, JP;
Shigetoshi Sugawa, Miyagi, JP;
Akinobu Teramoto, Miyagi, JP;
Foundation For Advancement Of International Science, Tsukuba, Ibaraki Prefecture, JP;
Abstract
A MIS transistor, formed on a semiconductor substrate, assumed to comprise a semiconductor substrate () comprising a projecting part (B) with at least two different crystal planes on the surface on a principal plane, a gate insulator (B) for covering at least a part of each of said at least two different crystal planes constituting the surface of the projecting part, a gate electrode (B), comprised on each of said at least two different crystal planes constituting the surface of the projecting part, which sandwiches the gate insulator with the said at least two different planes, and a single conductivity type diffusion region () formed in the projecting part facing each of said at least two different crystal planes and individually formed on both sides of the gate electrode. Such a configuration allows control over increase in the element area and increase of channel width.