Company Filing History:
Years Active: 2022
Title: Takefumi Fujimoto: Innovator in Semiconductor Technology
Introduction
Takefumi Fujimoto is a prominent inventor based in Kyoto, Japan. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.
Latest Patents
Fujimoto holds a patent for a semiconductor device that features an n-type semiconductor substrate. This substrate includes an n-type impurity with a diffusion coefficient that is less than that of phosphorus. The device comprises an n-type epitaxial layer with a high concentration region, an intermediate concentration region, and a low concentration region. These regions are formed in a specific order from the semiconductor substrate side, creating a concentration gradient that decreases in a downward step-wise manner. Additionally, the device includes a trench structure with a trench formed in the low concentration region, an insulating layer on the trench's inner wall, and an embedded electrode across the insulating layer.
Career Highlights
Fujimoto is associated with Rohm Co., Ltd., a leading company in the semiconductor industry. His work at Rohm has allowed him to focus on advancing semiconductor technologies and contributing to the company's innovative projects.
Collaborations
Fujimoto has collaborated with Masaki Nagata, a fellow innovator in the field. Their partnership has fostered the development of cutting-edge semiconductor solutions.
Conclusion
Takefumi Fujimoto's contributions to semiconductor technology exemplify his dedication to innovation. His patent and collaborations highlight his role as a key player in advancing the industry.