Fukui, Japan

Takayoshi Hishikawa

This inventor holds 1 USPTO granted patent. Top assignee: Ablic Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takayoshi Hishikawa. Retrieved from https://idiyas.com/inventor/takayoshi-hishikawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Takayoshi Hishikawa: Innovator in Ribbon-Type Electrode Technology

Introduction

Takayoshi Hishikawa is a notable inventor based in Fukui, Japan. He has made significant contributions to the field of sensor technology, particularly with his innovative designs that enhance long-term sensing capabilities.

Latest Patents

Hishikawa holds a patent for a ribbon-type electrode and a ribbon-type sensor. This invention features a ribbon-type electrode that includes an electrode section containing a first electrode and a second electrode. The first electrode consists of a thin plate-like structure made from a metal with a higher ionization tendency than hydrogen. The two electrodes are arranged to face each other, separated by an insulating section made of non-conductive fibers. This design allows for improved performance in long-term sensing applications.

Career Highlights

Hishikawa is associated with Ablic Inc., where he continues to develop innovative technologies. His work has been instrumental in advancing the capabilities of sensors used in various applications.

Collaborations

He has collaborated with notable colleagues, including Takatsugu Ueki and Hitoshi Yoshida, contributing to the development of cutting-edge technologies in the field.

Conclusion

Takayoshi Hishikawa's contributions to ribbon-type electrode technology exemplify his innovative spirit and dedication to advancing sensor technology. His work continues to influence the industry and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…