Osaka, Japan

Takashi Shimoda

This inventor holds 3 USPTO granted patents. Top assignee: Sumitomo Electric Industries, Limited. Active years: 1977-1986.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Shimoda. Retrieved from https://idiyas.com/inventor/takashi-shimoda

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.4

ph-index = 3

Forward Citations = 26(Granted Patents)


Location History:

  • Osaka, JA (1977)
  • Osaka, JP (1981)
  • Itami, JP (1986)

Company Filing History:


Years Active: 1977-1986

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3 patents (USPTO):Explore Patents

Title: Takashi Shimoda: Innovator in Crystal Growth Technology

Introduction

Takashi Shimoda is a prominent inventor based in Osaka, Japan. He has made significant contributions to the field of crystal growth technology, particularly in the development of gallium arsenide (GaAs) and gallium phosphide (GaP) single crystals. With a total of 3 patents to his name, Shimoda's work has advanced the understanding and manufacturing processes of these important materials.

Latest Patents

One of Shimoda's latest patents is focused on a GaAs single crystal that contains at least one impurity selected from the group consisting of indium (In), aluminum (Al), carbon (C), and sulfur (S). This innovation ensures that the fluctuation of the impurity concentration is less than 20% throughout the crystal, allowing for the production of wafers with uniform characteristics. The process involves pulling up the single crystal from a raw material melt at high temperature and pressure while controlling the concentration of arsenic (As) to maintain a distribution coefficient of the impurity within ±0.1.

Another notable patent involves the manufacturing of gallium phosphide single crystals with low defect density. These crystals are produced using the liquid encapsulation Czochralski pulling method and can be doped with electrically active dopants such as boron. The patent specifies that the sum of dislocation etch pit density and small conical etch pit density on the surface must not exceed 1×10^5 cm^-2, ensuring high-quality crystal production.

Career Highlights

Takashi Shimoda is currently employed at Sumitomo Electric Industries, Limited, where he continues to innovate in the field of crystal growth. His work has not only contributed to advancements in semiconductor technology but has also positioned him as a key figure in the research and development of high-quality materials.

Collaborations

Throughout his career, Shimoda has collaborated with notable colleagues, including Masami Sasaki and Shin-ichi Akai. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas in the field of crystal growth.

Conclusion

In summary, Takashi Shimoda is a distinguished inventor whose work in the development of GaAs and GaP single crystals has made a significant impact on the industry. His innovative patents and contributions to Sumitomo Electric Industries

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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