Tokyo, Japan

Takashi Ohnishi

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Hitachi High-Tech Corporation. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Ohnishi. Retrieved from https://idiyas.com/inventor/takashi-ohnishi-bzi49cmb

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Takashi Ohnishi: Inventor of High-Voltage Insulation Technology.

Introduction

Takashi Ohnishi is an inventor based in Tokyo, Japan, associated with Hitachi High-Tech Corporation. His patent work concerns high-voltage insulation and charged-particle equipment.

Latest Patents

Ohnishi is named on 1 patent: “High-voltage insulating structure, charged particle gun, and charged particle beam device.” The invention describes an axial conductive part surrounded by an insulator composed of multiple insulating sections. The third insulator has lower electrical resistivity than the first and second insulators, and its thickness is smaller on the outer side, farther from the conductive part, than on the inner side, closer to it. The structure is intended for use in charged-particle guns and charged-particle beam devices.

Career Highlights

Ohnishi’s listed patent reflects work on insulating structures for high-voltage applications in charged-particle technology. He is associated with Hitachi High-Tech Corporation, a company active in advanced technology and equipment.

Collaborations

Ohnishi’s listed coworker is Yasuchika Suzuki, who is also associated with the patent.

Conclusion

Takashi Ohnishi’s patent focuses on a specialized insulating design for high-voltage charged-particle equipment, highlighting his contribution to this area of engineering.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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