Setagaya, Japan

Takashi Mizoguchi

This inventor holds 1 USPTO granted patent. Top assignee: Asm IP Holding B.v.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takashi Mizoguchi. Retrieved from https://idiyas.com/inventor/takashi-mizoguchi-310ogpee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Takashi Mizoguchi: Innovator in Silicon Deposition Methods

Introduction

Takashi Mizoguchi is a prominent inventor based in Setagaya, Japan. He has made significant contributions to the field of material science, particularly in the methods of depositing silicon nitride and silicon oxide. His innovative approaches have implications for various applications in technology and manufacturing.

Latest Patents

Mizoguchi holds a patent for "Silicon nitride and silicon oxide deposition methods using fluorine inhibitor." This patent describes methods for depositing materials on the surface of a substrate. The techniques involve using a fluorine reactant to reduce the growth rate per cycle of silicon oxide and/or silicon nitride deposited onto the substrate's surface. This advancement enhances the efficiency and effectiveness of material deposition processes.

Career Highlights

Takashi Mizoguchi is associated with Asm IP Holding B.V., where he continues to develop and refine his innovative techniques. His work has positioned him as a key figure in the field of semiconductor manufacturing and material science.

Collaborations

Mizoguchi has collaborated with notable professionals in his field, including Eiichiro Shiba and Shinya Ueda. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

In summary, Takashi Mizoguchi is a distinguished inventor whose work in silicon deposition methods has made a significant impact on material science. His contributions continue to influence advancements in technology and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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