Company Filing History:
Years Active: 1999-2001
Title: Takahiro Oonakado: Innovator in Non-Volatile Semiconductor Memory Devices
Introduction
Takahiro Oonakado is a prominent inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of non-volatile memory devices. With a total of 2 patents to his name, Oonakado's work has had a notable impact on the industry.
Latest Patents
Oonakado's latest patents focus on non-volatile semiconductor memory devices. In his innovative design, a p-type source region and a p-type drain region are formed on the surface of an n-well. A floating gate electrode and a control gate electrode are positioned on a channel region, separated by a tunnel oxide film. This structure allows for a negative potential to be applied to the drain region and a positive potential to the control gate electrode during data programming. Consequently, electrons are injected from the drain region to the floating gate electrode through a band-to-band tunnel current, which is induced by hot electron injection. This design not only prevents deterioration of the tunnel oxide film but also allows for miniaturization of the memory device.
Career Highlights
Takahiro Oonakado is associated with Mitsubishi Electric Corporation, where he continues to advance semiconductor technology. His work has been instrumental in enhancing the performance and reliability of memory devices, making them more efficient for various applications.
Collaborations
Oonakado has collaborated with notable colleagues, including Hiroshi Onoda and Natsuo Ajika. Their combined expertise has contributed to the successful development of innovative semiconductor solutions.
Conclusion
Takahiro Oonakado's contributions to non-volatile semiconductor memory devices exemplify his commitment to innovation in technology. His patents reflect a deep understanding of semiconductor design and functionality, paving the way for future advancements in the field.