Mitsubishi Denki Kabushiki Kaisha

Takahiro Oonakado

Natsuo Ajika

Kiyohiko Sakakibara

Hiroshi Onoda

In a non-volatile semiconductor memory device according to the present invention, a p type source region and a p type drain region are formed in the surface of an n well. A floating gate electrode and a control gate electrode are formed on a channel region with a tunnel oxide film interposed therebetween. According to this structure, a negative potential is applied to the drain region and a positive potential is applied to the control gate electrode when data is programmed, whereby electrons are injected from the drain region to the floating gate electrode by a band-to-band tunnel current induced hot electron injection current in the drain region. As a result, a non-volatile semiconductor memory device is provided which can prevent deterioration of the tunnel oxide film and which can be miniaturized.

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Hyogo, Japan

Takahiro Oonakado