Tokyo, Japan

Takahide Nakamura


Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 70(Granted Patents)


Company Filing History:

goldMedal1 out of 832,880 
Other
 patents

Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Takahide Nakamura: Innovator in Semiconductor Technology

Introduction

Takahide Nakamura is a prominent inventor based in Tokyo, Japan. He is known for his contributions to semiconductor technology, particularly in the field of silicon-on-insulator (SOI) manufacturing methods. With a focus on improving semiconductor device fabrication, Nakamura has made significant strides in this area.

Latest Patents

Nakamura holds a patent for a method of manufacturing an improved SOI. This innovative method involves preparing a first semiconductor substrate with an insulating film, followed by the formation of a semiconductor film of n-type conductivity. The process includes bonding insulating films through thermal processing and creating a semiconductor layer that enhances the performance of metal-insulator-semiconductor field-effect transistors (MISFETs).

Career Highlights

Throughout his career, Takahide Nakamura has demonstrated a commitment to advancing semiconductor technology. His work has led to the development of efficient manufacturing techniques that are crucial for modern electronic devices. His patent reflects his expertise and innovative approach to solving complex engineering challenges.

Collaborations

Nakamura has collaborated with notable colleagues, including Hiroo Masuda and Hisako Sato. These partnerships have contributed to the successful development and implementation of his patented technologies.

Conclusion

Takahide Nakamura's contributions to semiconductor technology through his innovative patent highlight his role as a key figure in the field. His work continues to influence the development of advanced electronic devices, showcasing the importance of innovation in technology.

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