Tsukuba, Japan

Takafumi Kamimura

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: National Institute of Advanced Industrial Science and Technology. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Takafumi Kamimura. Retrieved from https://idiyas.com/inventor/takafumi-kamimura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 4(Granted Patents)


Company Filing History:


Years Active: 2012

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1 patent (USPTO):Explore Patents

Title: **Innovative Contributions of Takafumi Kamimura in Memory Device Technology**

Introduction

Takafumi Kamimura is a prominent inventor based in Tsukuba, Japan, renowned for his significant contributions to memory device technology. His innovative approach and dedication to research have led to the successful development of a unique patent, which addresses challenges in programming voltages for memory devices.

Latest Patents

Kamimura holds a patent titled "Memory device with reduced programming voltage method of reduction of programming voltage and method of reading such memory device." This invention encompasses a memory device that includes a first semiconductor region with specific dimensions, where the equivalent sectional radius of the cross section is set to 10 nm or less. This innovative design allows for low programming voltages, facilitating efficient operation under room temperature conditions.

Career Highlights

Takafumi Kamimura is affiliated with the National Institute of Advanced Industrial Science and Technology, where he has been instrumental in advancing research in semiconductor technologies. His work combines academic theory with practical application, contributing to the evolution of memory device functionalities in modern electronics.

Collaborations

Throughout his career, Kamimura has collaborated with notable colleagues, including Yutaka Hayashi and Kazuhiko Matsumoto. These collaborations have fostered a dynamic exchange of ideas and methodologies, enabling the development of cutting-edge technology in the field of memory devices.

Conclusion

In summary, Takafumi Kamimura’s work exemplifies the spirit of innovation in memory device technology. His patent contributes significantly to the reduction of programming voltages, thus enhancing the performance of memory devices. As he continues his research at the National Institute of Advanced Industrial Science and Technology, his future contributions are eagerly anticipated by colleagues and the tech industry alike.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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