Kawasaki, Japan

Takae Sukegawa


Average Co-Inventor Count = 2.4

ph-index = 3

Forward Citations = 53(Granted Patents)


Location History:

  • Kanagawa, JP (1999 - 2003)
  • Kawasaki, JP (2004 - 2010)
  • Kokubunji, JP (2013 - 2014)
  • Yokohama, JP (2011 - 2015)

Company Filing History:


Years Active: 1999-2015

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12 patents (USPTO):Explore Patents

Title: Takae Sukegawa: Innovator in Semiconductor Technology

Introduction

Takae Sukegawa is a prominent inventor based in Kawasaki, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 12 patents. Her work focuses on advancements in MOS transistors and semiconductor integrated circuit devices.

Latest Patents

One of her latest patents involves a high-voltage MOS transistor and a fabrication method for semiconductor integrated circuit devices. This invention features a semiconductor substrate with a first well of a first conductivity type, where a drain region and a drift region are formed. Additionally, a second well of a second, opposite conductivity type is included, which contains a source region and a channel region. The design incorporates a gate electrode that extends over the substrate from the second well to the first well via a gate insulation film. A buried insulation film is formed in the drift region underneath the gate insulation film at the drain edge of the gate electrode. An offset region is also created in the semiconductor substrate between the channel region and the buried insulation film, where the resistance of the offset region is reduced by introducing an impurity element of the first conductivity type with a concentration exceeding that of the first well.

Another notable patent describes a semiconductor device that includes a silicon substrate with a first region and a second region. A gate electrode is positioned above both regions, and an insulation film extends from the gate electrode to the second region, covering part of the gate electrode and part of the second region. The device also features a source region and a drain region formed in the silicon substrate, with silicide formed on the source region, drain region, and gate electrode. An interlayer insulation film is formed above the gate electrode and insulation film, containing multiple electrically conductive vias that connect to the gate electrode.

Career Highlights

Takae Sukegawa has worked with notable companies such as Fujitsu Corporation and Fujitsu Semiconductor Limited. Her experience in these organizations has allowed her to develop and refine her innovative ideas in semiconductor technology.

Collaborations

Throughout her career, Takae has collaborated with esteemed colleagues, including Hidekazu Sato and Shigeo Satoh. These partnerships have contributed to her success and the advancement of her inventions.

Conclusion

Takae Sukegawa is a remarkable inventor whose work in semiconductor technology has led to significant advancements

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