Tsukuba, Japan

Taiga Goto

This inventor holds 1 USPTO granted patent. Top assignees: Institute of Science Tokyo, University of Tsukuba. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Taiga Goto. Retrieved from https://idiyas.com/inventor/taiga-goto-5vosbqw6

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Taiga Goto: Innovator in Hydrogen Storage Technology

Introduction

Taiga Goto is a prominent inventor based in Tsukuba, Japan. He has made significant contributions to the field of hydrogen storage technology. His innovative work focuses on materials that enhance the efficiency of hydrogen storage and release.

Latest Patents

Taiga Goto holds a patent for a hydrogen storage and release material and the method of producing the same. This invention includes a two-dimensional hydrogen boride-containing sheet that features a two-dimensional network containing n(HB) with specific molar ratios of boron to hydrogen. The material is characterized by distinct peaks in X-ray photoelectron spectroscopy and infrared spectroscopy, indicating its unique properties.

Career Highlights

Throughout his career, Taiga Goto has worked at notable institutions, including the University of Tsukuba and the Institute of Science Tokyo. His research has focused on advancing hydrogen storage technologies, which are crucial for sustainable energy solutions.

Collaborations

Taiga Goto has collaborated with esteemed colleagues such as Takahiro Kondo and Ryota Ishibiki. These partnerships have contributed to the development of innovative technologies in the field of hydrogen storage.

Conclusion

Taiga Goto's work in hydrogen storage technology exemplifies the importance of innovation in addressing energy challenges. His contributions continue to influence the field and pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…