Albany, NY, United States of America

Taifong Chao

USPTO Granted Patents = 1 

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Taifong Chao

Introduction: Taifong Chao is a notable inventor based in Albany, NY (US). He has made significant contributions to the field of integrated circuit structures. His work focuses on enhancing the uniformity of semiconductor manufacturing processes.

Latest Patents: Taifong Chao holds 1 patent for his invention titled "Controlling within-die uniformity using doped polishing material." This patent includes various embodiments that describe methods and integrated circuit structures. The method involves forming a mask over an oxide layer and a set of fin structures, implanting the oxide layer, and polishing the oxide layer to expose the fin structures.

Career Highlights: Chao's career is marked by his innovative approach to semiconductor technology. His work has been instrumental in improving the manufacturing processes of integrated circuits. He is currently associated with GlobalFoundries Inc., a leading semiconductor manufacturer.

Collaborations: Throughout his career, Taifong Chao has collaborated with esteemed colleagues such as Haigou Huang and Jinping Liu. These collaborations have furthered advancements in semiconductor technology.

Conclusion: Taifong Chao's contributions to the field of integrated circuits and his innovative patent demonstrate his commitment to advancing semiconductor technology. His work continues to influence the industry and pave the way for future innovations.

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