The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 05, 2017

Filed:

May. 20, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Haigou Huang, Rexford, NY (US);

Jinping Liu, Ballston Lake, NY (US);

Huang Liu, Mechanicville, NY (US);

Taifong Chao, Albany, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/8234 (2006.01); H01L 21/3105 (2006.01); H01L 21/3115 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/285 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/0217 (2013.01); H01L 21/02247 (2013.01); H01L 21/28518 (2013.01); H01L 21/31055 (2013.01); H01L 21/31155 (2013.01); H01L 21/823821 (2013.01); H01L 29/66795 (2013.01); H01L 29/66803 (2013.01); H01L 29/785 (2013.01); H01L 29/7856 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01);
Abstract

Various embodiments include methods and integrated circuit structures. In some cases, a method of forming an integrated circuit structure can include: forming a mask over an oxide layer and an underlying set of fin structures, the set of fin structures including a plurality of fins each having a substrate base and a silicide layer over the substrate base; implanting the oxide layer through an opening in the mask; removing the mask; polishing the oxide layer overlying the set of fin structures after removing the mask to expose the set of fin structures; and forming a nitride layer over the set of fin structures.


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