Suwon-si, South Korea

Taeyoon An

This inventor holds 1 USPTO granted patent and 1 published patent application and 1 EPO patent. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Taeyoon An. Retrieved from https://idiyas.com/inventor/taeyoon-an-yc4cf5ah

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

Loading Chart...
Loading Chart...
1 patent (USPTO):Explore Patents

Title: Taeyoon An and Semiconductor Memory Innovation.

Introduction

Taeyoon An is an inventor based in Suwon-si, South Korea. His listed patent work concerns semiconductor memory device design, and he is associated with Samsung Electronics.

Latest Patents

An is credited with 1 patent, titled “Semiconductor Memory Device.” The invention describes a semiconductor substrate with active regions separated by device-isolation trenches. Gate trenches cross the active regions and isolation layer, with word lines positioned in the gate trenches. The trench sections in the isolation layer are deeper than those in the active regions. The isolation layer also uses a lower portion made from a dielectric material with a lower dielectric constant than the upper portion. These structural features relate to the design of semiconductor memory devices.

Career Highlights

An’s listed patent is associated with Samsung Electronics, a company active in semiconductor technology. The patent describes a device structure that combines gate trenches, word lines, and dielectric isolation features.

Collaborations

Jun-bum Lee and Junsoo Kim are identified as An’s coworkers. The available information does not specify their roles or whether they collaborated on this patent.

Conclusion

Taeyoon An’s recorded invention focuses on the structure of a semiconductor memory device, reflecting his connection to semiconductor innovation at Samsung Electronics.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…