Company Filing History:
Years Active: 2019-2020
Title: Innovations by Tae Yoon An in Semiconductor Technology
Introduction
Tae Yoon An is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to reducing leakage current in semiconductor devices.
Latest Patents
His latest patents focus on semiconductor devices that include structures designed to minimize leakage current. The patents describe a semiconductor device that features a substrate, a lower semiconductor layer, and an upper semiconductor layer. A buried insulating layer is positioned between these layers. The design includes a first trench in the upper semiconductor layer, which houses a first conductive pattern. Additionally, a second trench is present in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer, containing a second conductive pattern. This innovative structure allows for a first source/drain region to be established in the upper semiconductor layer, enhancing the device's efficiency.
Career Highlights
Tae Yoon An is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of semiconductor technology. His work has been instrumental in developing advanced semiconductor devices that are crucial for modern electronics.
Collaborations
He collaborates with talented coworkers, including Min Hee Cho and Jun Soo Kim, who contribute to the innovative projects at Samsung Electronics.
Conclusion
Tae Yoon An's contributions to semiconductor technology through his patents reflect his commitment to innovation and excellence in the field. His work not only enhances the performance of semiconductor devices but also paves the way for future advancements in technology.