Samsung Electronics Co., Ltd.

Tae Yoon An

Satoru Yamada

Min Hee Cho

Jun Soo Kim

Hui Jung Kim

Jae Ho Hong

Moon Young Jeong

Won Sok Lee

Ki Jae Hur

Nam Ho Jeon

A semiconductor device and a method for fabricating the same are provided. A semiconductor device having a substrate can include a lower semiconductor layer, an upper semiconductor layer on the lower semiconductor layer, and a buried insulating layer between the lower semiconductor layer and the upper semiconductor layer. A first trench can be in the upper semiconductor layer having a lowest surface above the buried insulating layer and a first conductive pattern recessed in the first trench. A second trench can be in the lower semiconductor layer, the buried insulating layer, and the upper semiconductor layer. A second conductive pattern can be in the second trench and a first source/drain region can be in the upper semiconductor layer between the first conductive pattern and the second conductive pattern.

Semiconductor devices including structures for reduced leakage current and method of fabricating the same

Growing community of inventors

Hwaseong-si, South Korea

Tae Yoon An