Miyagi, Japan

Tadihiro Ohmi

This inventor holds 1 USPTO granted patent. Top assignee: Osaka Sanso Kogyo Ltd.. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tadihiro Ohmi. Retrieved from https://idiyas.com/inventor/tadihiro-ohmi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 1998

Loading Chart...
1 patent (USPTO):Explore Patents

Title: The Innovations of Tadihiro Ohmi

Introduction

Tadihiro Ohmi is a notable inventor based in Miyagi-ken, Japan. He has made significant contributions to the field of measurement technology, particularly in the area of external leakage detection. His work is recognized for its practical applications and innovative approach.

Latest Patents

Tadihiro Ohmi holds a patent for a "Method and system for measuring external leakage." This invention showcases his expertise in developing solutions that enhance measurement accuracy and reliability.

Career Highlights

Ohmi is currently employed at Osaka Sanso Kogyo Ltd., where he continues to innovate and contribute to the company's advancements in technology. His role at the company allows him to apply his knowledge and skills in a collaborative environment.

Collaborations

Throughout his career, Tadihiro Ohmi has worked alongside talented colleagues, including Atsushi Ohki and Yohichi Kanno. These collaborations have fostered a creative atmosphere that encourages the development of new ideas and technologies.

Conclusion

Tadihiro Ohmi's contributions to the field of measurement technology, particularly through his patent on external leakage measurement, highlight his innovative spirit and dedication to advancing technology. His work at Osaka Sanso Kogyo Ltd. and collaborations with fellow inventors further emphasize his impact in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…