Yamanashi, Japan

Tadashi Abe

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1994.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Tadashi Abe. Retrieved from https://idiyas.com/inventor/tadashi-abe-ralgtmb3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 1994

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1 patent (USPTO):Explore Patents

Title: The Innovations of Tadashi Abe

Introduction

Tadashi Abe is a notable inventor based in Yamanashi, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative solutions that enhance the performance and reliability of memory devices.

Latest Patents

One of Tadashi Abe's key patents is a semiconductor memory device that incorporates redundancy memory cells for replacement. This invention addresses the issue of defective memory cells by selecting a redundant memory cell in parallel with a defective one. The design ensures that the drive start timing of the redundant main word line is not delayed, thus preventing any timing issues that could affect performance.

Career Highlights

Tadashi Abe has had a successful career at Hitachi, Ltd., where he has been instrumental in advancing semiconductor technologies. His expertise in memory devices has positioned him as a valuable asset in the industry. With a total of 1 patent, his contributions continue to influence the development of reliable memory solutions.

Collaborations

Throughout his career, Tadashi has collaborated with esteemed colleagues such as Makoto Saeki and Kiyoshi Nagai. These partnerships have fostered innovation and have led to the successful implementation of various projects within the semiconductor field.

Conclusion

Tadashi Abe's work in semiconductor memory technology exemplifies the impact of innovative thinking in addressing industry challenges. His contributions continue to shape the future of memory devices, ensuring enhanced performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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