This inventor holds 1 USPTO granted patent. Top assignee: United States of America as Represented by the Secretary of the Air Force. Active years: 1995.
Company Filing History:
Years Active: 1995
Title: Innovations of T Walter Haas in Molecular Beam Epitaxy
Introduction
T Walter Haas is an accomplished inventor based in Kettering, OH (US). He has made significant contributions to the field of semiconductor manufacturing, particularly through his innovative patent related to molecular beam epitaxy (MBE). His work has enhanced the capabilities of thin-film semiconductor growth processes, making them more efficient and reliable.
Latest Patents
Haas holds a patent for a "Hierarchical control system for molecular beam epitaxy." This multi-featured control system improves the manufacturing capability of the thin-film semiconductor growth process. The system enhances repeatability and accuracy, reduces manpower requirements, and creates a better MBE environment for scientific investigation. It consists of three levels of feedback control. The first level focuses on improving the precision and tracking of process variables, such as flux and substrate temperature. The second level includes an expert system that utilizes sensors to monitor product status, allowing for real-time adjustments to achieve desired qualities. The third level features a continuously evolving neural network model that recommends recipes and command inputs to meet specific goals, particularly useful during the development of new materials.
Career Highlights
Haas has worked for the United States of America as Represented by the Secretary of the Air Force. His role has allowed him to contribute to advancements in semiconductor technology, particularly in the area of molecular beam epitaxy. His innovative approach has led to improved processes that benefit both manufacturing and research.
Collaborations
Haas has collaborated with notable colleagues, including Jeffrey J Heyob and Oliver D Patterson. Their combined expertise has furthered the development of advanced technologies in the semiconductor field.
Conclusion
T Walter Haas is a key figure in the advancement of molecular beam epitaxy technology. His innovative patent and contributions to the field have significantly improved the efficiency and effectiveness of semiconductor manufacturing processes. His work continues to influence the industry and pave the way for future innovations.