Oullins, France

Sébastien Noël

This inventor holds 1 USPTO granted patent. Top assignee: Abb Entrelec. Active years: 2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sébastien Noël. Retrieved from https://idiyas.com/inventor/sébastien-noël

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: Innovations by Sébastien Noël: A Focus on Current Sensor Technology.

Introduction

Sébastien Noël is an innovative inventor based in Oullins, France. He has made significant contributions to the field of sensor technology, particularly with his patented invention that addresses challenges in current measurement.

Latest Patents

Sébastien Noël holds a patent for a "Current sensor with reduced sensitivity to parasitic magnetic fields." This invention includes several magnetic-field-sensitive components arranged on a support to measure current flowing through a conductor. The design features a processing circuit that receives output signals from these components. Each component is connected to a summing point via a summing resistor, ensuring accurate measurements despite external magnetic interference. The support is designed as a printed circuit, with conductor tracks routed in a zigzag manner to form a bunched or braided conductor, enhancing the sensor's performance.

Career Highlights

Sébastien Noël is associated with Abb Entrelec, where he applies his expertise in sensor technology. His work focuses on developing innovative solutions that improve the accuracy and reliability of current sensors in various applications.

Conclusion

Sébastien Noël's contributions to current sensor technology exemplify the importance of innovation in addressing technical challenges. His patented invention showcases his commitment to advancing the field and improving measurement techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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