Sébastien Desplobain

Title: Sébastien Desplobain: Innovator in Multilayer Structure Technology

Introduction

Sébastien Desplobain is a notable inventor based in Le Versoud, France. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for forming multilayer structures. His work has implications for various applications in electronics and materials science.

Latest Patents

Sébastien Desplobain holds a patent for a "Method for forming a multilayer structure." This method involves creating a stack that includes an electron hole blocking layer, a first layer made from N-doped semiconductor material with a high dopant concentration, and a second layer made from a different type of semiconductor material. A lateral electric contact pad is established between the first layer and the substrate, and the first layer undergoes anodic treatment in an electrolyte. This innovative approach enhances the performance and efficiency of multilayer structures.

Career Highlights

Throughout his career, Sébastien has worked with prominent organizations, including the Commissariat à l'Énergie Atomique et aux Énergies Alternatives and STMicroelectronics (Crolles 2) SAS. His experience in these institutions has allowed him to refine his skills and contribute to cutting-edge research and development in semiconductor technologies.

Collaborations

Sébastien has collaborated with esteemed colleagues such as Frederic-Xavier Gaillard and Yves Morand. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Sébastien Desplobain's contributions to the field of multilayer structures exemplify the impact of innovative thinking in technology. His patent and career achievements highlight his role as a significant figure in semiconductor research.