The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2013
Filed:
Nov. 10, 2011
Sébastien Desplobain, Le Versoud, FR;
Frederic-xavier Gaillard, Volron, FR;
Yves Morand, Grenoble, FR;
Fabrice Nemouchi, Molrans, FR;
Sébastien Desplobain, Le Versoud, FR;
Frederic-Xavier Gaillard, Volron, FR;
Yves Morand, Grenoble, FR;
Fabrice Nemouchi, Molrans, FR;
Commissariat a l'Energie Atomique et aux Energies Alternatives, Paris, FR;
STMicroelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
The method for forming a multilayer structure on a substrate comprises providing a stack successively comprising an electron hole blocking layer, a first layer made from N-doped semiconductor material having a dopant concentration greater than or equal to 10atoms/cmor P-doped semiconductor material, and a second layer made from semiconductor material of different nature. A lateral electric contact pad is made between the first layer and the substrate, and the material of the first layer is subjected to anodic treatment in an electrolyte.