Company Filing History:
Years Active: 1999-2001
Title: Innovations of Sze Him Ng
Introduction
Sze Him Ng is an accomplished inventor based in Campbell, California. He holds 2 patents that contribute significantly to the field of semiconductor technology. His work focuses on enhancing the performance and reliability of MOS transistors.
Latest Patents
One of his latest patents is a MOS transistor with a shield coplanar with the gate electrode. This invention includes a gate electrode on a gate oxide over a channel region between a source region and a drain region. It also features a shield electrode that is at least partially on the gate oxide, adjacent to, self-aligned with, and at least partially coplanar with the gate electrode and positioned between the gate electrode and the drain region. By placing the shield electrode on the gate oxide, this design improves gate-drain shielding, reduces gate-drain capacitance (Cgd), and mitigates hot electron-related reliability hazards.
Career Highlights
Sze Him Ng is currently employed at Spectrian Corporation, where he continues to innovate in the semiconductor industry. His contributions have been pivotal in advancing the technology used in modern electronic devices.
Collaborations
One of his notable coworkers is Francois Hebert, who brings valuable expertise to their collaborative efforts.
Conclusion
Sze Him Ng's innovative work in MOS transistor technology showcases his commitment to improving electronic device performance and reliability. His patents reflect a deep understanding of semiconductor design and engineering.