The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 09, 2001
Filed:
Aug. 25, 1998
Applicant:
Inventors:
Sze Him Ng, Campbell, CA (US);
Francois Hebert, San Mateo, CA (US);
Assignee:
Spectrian Corporation, Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/162 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/162 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract
A MOS transistor including a gate electrode on a gate oxide over a channel region between a source region and a drain region also includes a shield electrode at least partially on the gate oxide adjacent to, self-aligned with, and at least partially coplanar with the gate electrode and between the gate electrode and drain region. Placing the shield electrode on the gate oxide improves the gate-drain shielding, reduces the gate-drain capacitance, Cgd, and reduces hot electron related reliability hazard.